MPS5179

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MPS5179/D High Frequency Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS5179 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) VCEO(sus) V(BR)CBO V(BR)EBO ICBO — — 0.02 1.0 12 20 2.5 — — — Vdc Vdc Vdc µAdc ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 25 — — 250 0.4 1.0 — Vdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Devic...