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MMBTA14

UTC

DARLINGTON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR 3  DESCRIPTION The UTC MMBTA14...


UTC

MMBTA14

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Description
UNISONIC TECHNOLOGIES CO., LTD MMBTA14 NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR 3  DESCRIPTION The UTC MMBTA14 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAX) = 350 mW 1 2 SOT-23 (JEDEC TO-236) 3 21 SOT-323  ORDERING INFORMATION Ordering Number MMBTA14G-AE3-R MMBTA14G-x-AL3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 C: Collector Pin Assignment 123 EBC EBC Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-038.D MMBTA14 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCES 30 V 30 V Emitter-Base Voltage Collector Dissipation (TC=25C) VEBO PC 10 V 350 mW Collector Current Junction Temperature IC 500 mA TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL Collector-Emitter Breakdown Voltage Collector CutOff Current BVCES ICBO Emitter CutOff Current DC Current Gain IEBO hFE Collector-Emitter Saturation Voltage Base-Emitter on Voltage VCE(SAT) VBE(ON) Current Gain Bandwidth...




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