MMBTA13

UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MMBTA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number MMBTA13G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 123 EBC Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-006.d MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO 30 V VCES 30 V Emitter-Base Voltage Collector Dissipation VEBO VEBO 10 V 350 mW Collector Current Junction Temperature IC 500 mA TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Breakdown Voltage Collector Cut-Off Current BVCES ICBO IC=100A, IB=0 VCB=30V, IE=0 Emitter Cut-Off Current DC Current Gain IEBO VEB=10V, IC=0 hFE VCE=5V, IC=100mA Collector-Emitter Saturation Voltage Base-Emitt...