MMJT350T1

www.DataSheet4U.com MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain − hFE = 30−240 @ IC = 50 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.75 WATTS C 2,4 B1 E3 Schematic 4 1 2 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW T350 G G A = Assembly Location Y = Year W = Work Week G = Pb−Free Package T350 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device MMJT350T1 MMJT350T1G Package SOT−223 SOT−223 (Pb−Free) Shipping † 1000 / Tape & Reel 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 2 Publication Order Number: MMJT350T1/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...