MMDL914T1

www.DataSheet4U.com MMDL914T1 Preferred Device High−Speed Switching Diode Features Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 CATHODE 2 ANODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 −55 to 150 Unit mW mW/°C °C/W °C 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 Minimum Pad. 5D M G G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) V(BR) IR − − CT VF trr − − − 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 − Vdc Symbol Min Max Unit 5D M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMDL914T1 MMDL914T1G...