MV409

www.DataSheet4U.com Silicon Tuning Diode This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package MMBV409LT1 MV409 VOLTAGE VARIABLE CAPACITANCE DIODES 3 3 CATHODE 1 ANODE 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg M B V 4 0 9 MMBV409LT1 Unit 20 20 Vdc 200 200 mAdc 280 225 mW 2.8 1.8 mW/°C +125 °C –55 to +150 °C DEVICE MARKING MMBV409LT1=X5,MV409=MV409 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (V R=15Vdc) Diode Capacitance Temperature Coefficient Symbol V (BR)R I Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µ Adc ppm/°C R T CC Device Type C T Diode Capacitance V R =3.0Vdc,f=1.0MHz pF Min Nom 29 Q,Figure of Merit C R ,Capacitance Ratio C 3/ C 8 V R =3.0Vdc f=1.0MHz(1) f=50MHz Min 200 Max 32 Min 1.5 Max 1.9 MMBV409LT1,MV409 26 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc I2–1/2 MMBV409LT1 MV409 TYPICAL CHARACTERISTICS 40 1000 C T , DIODE CAPACITANCE (pF) Q , FIGURE OF MERIT 32 2...