MV209

www.DataSheet4U.com MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package Pb−Free Packages are Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode 1 Anode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Forward Power Dissipation MMBV109LT1 @ TA = 25°C Derate above 25°C MV209 @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD 200 2.0 200 1.6 TJ Tstg +125 −55 to +150 mW mW/°C mW mW/°C °C °C 1 2 Value 30 200 Unit Vdc mAdc SOT−23 2 Cathode TO−92 1 Anode MARKING DIAGRAMS 3 M4A M G G 1 SOT−23 (TO−236) CASE 318−08 STYLE 8 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, ...