MMBT2132T1

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2132T1/D Product Preview General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD Rq JA PD PD Rq JA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C MMBT2132T1 MMBT2132T3 0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW 6 5 4 1 2 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3 NPN Symbol Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Base Breakdown Voltage (IC = 100 m Adc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) Emitter–Base Breakdown Voltage (IE = 100 m Adc) Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) V(BR)CBO 40 V(BR)CEO 30 V(BR)EBO 5.0 ICBO — — IEBO — — 10 — — 1.0 10 m Adc Vdc — — — — Vdc — Vdc ...