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MMBF2201NT1

ON Semiconductor

Power MOSFET

www.DataSheet4U.com MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniat...


ON Semiconductor

MMBF2201NT1

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www.DataSheet4U.com MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features http://onsemi.com 300 mAMPS, 20 VOLTS RDS(on) = 1 W N−Channel 3 Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC−70/SOT−323 Surface Mount Package Saves Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD 150 1.2 TJ, Tstg RqJA TL − 55 to 150 833 260 mW mW/°C °C °C/W °C Value 20 ± 20 300 240 750 Unit Vdc Vdc mAdc 3 Board Space 1 2 MARKING DIAGRAM AND PIN ASSIGNMENT 3 Drain 1 2 SC−70/SOT−323 CASE 419 STYLE 8 N1 M G G 1 2 Gate Source N1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) ...




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