2SK2837
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2837
Chopper Regulator, DC−DC Converter ...
2SK2837
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2837
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 20 80 150 960 20 15 150 −55 to 150
www.DataSheet.co.kr
Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC
mJ A mJ °C °C
― ― 2-16C1B
JEITA TOSHIBA
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Method...