MCR703A

www.DataSheet4U.com MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Features http://onsemi.com Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package − Case 369C To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves): Add ’1’ Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available 1 2 3 Max Unit V 100 400 600 VRSM 150 450 650 IT(RMS) IT(AV) 2.6 1.6 ITSM 25 35 I2t PGM PG(AV) IGM TJ Tstg 2.6 0.5 0.1 0.2 −40 to +110 −40 to +150 A2sec W W A 1 2 3 4 4.0 A A V 1 2 3 SCRs 4.0 AMPERES RMS 100 − 600 VOLTS G A K MARKING DIAGRAMS 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TC = −40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR706A MCR708A Peak Non-Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = −40 to +110°C) MCR703A MCR706A MCR708A On−State RMS Current (180° Conduction Angles; TC = 90°C) Average On−State Current (180° Conduction Angles) TC = −40 to +90°C TC = +100°C ...