(MCR218-x) Silicon Controlled Rectifiers Reverse Blocking Thyristors
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MCR218−2, MCR218−4, MCR218−6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyri...
Description
www.DataSheet4U.com
MCR218−2, MCR218−4, MCR218−6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.
Features http://onsemi.com
Glass-Passivated Junctions Blocking Voltage to 400 Volts TO-220 Construction − Low Thermal Resistance, High Heat
Dissipation and Durability Pb−Free Packages are Available*
SCRs 8 AMPERES RMS 50 thru 400 VOLTS
G A C
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2 MCR218−4 MCR218−6 On-State RMS Current (180° Conduction Angles; TC = 70°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 200 400 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 8.0 100 26 5.0 0.5 2.0 −40 to +125 −40 to +150 A 1 A A2s W W A °C °C A Y WW MCR218x G AKA 2 3 TO−220AB CASE 221A−07 STYLE 3 Value Unit V 4
MARKING DIAGRAM
AY WW MCR218x−G AKA
= Assembly Location = Year = Work Week = Device Code x = 2, 4 or 6 = Pb−Free Package = Diode Polarity
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