MB82DP02183D

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11436-1E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory MB82DP02183D-65L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface ■ DESCRIPTION The Fujitsu MB82DP02183D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183D is utilized using a Fujitsu advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP02183D is suited for mobile applications such as Cellular Handset and PDA. *: FCRAM is a trademark of Fujitsu Limited, Japan ■ FEATURES Asynchronous SRAM Interface Fast Access Cycle Time : 8 words Page Access Capability : Low Voltage Operating Condition : Wide Operating Temperature : tAA = tCE = 65 ns Max tPAA = 20 ns Max VDD = + 2.6 V to + 3.5 V TA = − 30 °C to + 85 °C TJ = − 30 °C to + 90 °C Byte Control by LB and UB Low Power Consumption Various Power Down mode Shipping Form : IDDA1 = 30 mA Max IDDS1 = 100 µA Max : Sleep 4M-bit Partial 8M-bit Partial : Wafer/Chip Copyright©2006 FUJITSU LIMITED All rights reserved MB82DP02183D-65L ■ PRODUCT LINEUP Parameter Access Time (Max) (tCE, tAA) Active Current (Max) (IDDA1) Standby Current (Max) (IDDS1) Power Down Current (Max) (IDDPS) MB82DP02183D-65L 65 ns 30 mA 100 µA 10 µA ■ PIN DESCRIP...