MB82DBS04163C

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11432-1E MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) MB82DBS04163C-70L ■ DESCRIPTION Mobile Phone Application Specific Memory The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format. MB82DBS04163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. The MB82DBS04163C adopts asynchronous page mode and synchronous burst mode for fast memory access as user configurable options. This MB82DBS04163C is suited for mobile applications such as Cellular Handset and PDA. * : FCRAM is a trademark of FUJITSU LIMITED, Japan ■ PRODUCT LINEUP Parameter Access Time (Max) (tCE, tAA) Access Time from CLK (Max) (tAC) Active Current (Max) (IDDA1) Standby Current (Max) (IDDS1) Power Down Current (Max) (IDDPS) MB82DBS04163C-70L 70 ns 10 ns 35 mA 90 µA 10 µA RL = 6, 5 TA ≤ + 40 °C ■ FEATURES Asynchronous SRAM Interface Fast Access Time : tCE = 70 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Burst Read/Write Access Capability : tAC = 10 ns Max Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low-Power Consumption : IDDA1 = 35 mA Max IDDS1 = 90 µA Max (TA ≤ + 40°C ) Various Power Down mode : Sleep 8 M-bit Parti...