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HVL142AM

Renesas Technology

Silicon Epitaxial Planar Pin Diode

www.DataSheet4U.com HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0200 Rev.2.00 Jan 19, ...


Renesas Technology

HVL142AM

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www.DataSheet4U.com HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0200 Rev.2.00 Jan 19, 2006 Features An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max) Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL142AM Laser Mark J Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark 1 J 2 1. Cathode 2. Anode Rev.2.00 Jan 19, 2006 page 1 of 5 HVL142AM Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 100 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 100 1.0 0.35 1.3 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature. Rev.2.00 Jan 19, 2006 page 2 of 5 HVL142AM Main Characteristic 10−2 10−7 10−8 Reverse current IR (A) 10−4 For...




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