AP4880AGM

www.DataSheet4U.com AP4800AGM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S 30V 18mΩ 9.4A ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±25 9.4 7.5 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 200621051-1/4 www.DataSheet4U.com AP4800AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.02 14 18 16 7 1 4.5 7 8 18 8 420 210 70 3.5 Max. Units 18 30 ...