(MAC8x) Triacs Silicon Bidirectional Thyristors
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MAC8D, MAC8M, MAC8N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high per...
Description
www.DataSheet4U.com
MAC8D, MAC8M, MAC8N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
http://onsemi.com Features
Blocking Voltage to 800 Volts On-State Current Rating of 8.0 Amperes RMS at 100°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt − 250 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt − 6.5 A/ms minimum at 125°C Pb−Free Packages are Available*
TRIACS 8 AMPERES RMS 400 thru 800 VOLTS
MT2 G
MT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic Peak Repetitive Off−State Voltage, (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D MAC8M MAC8N On-State RMS Current, (Full Cycle Sine Wave, 60 Hz, TC = 100°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM 8.0 80 A 1 A 2 3 TO−220AB CASE 221A−09 STYLE 4 Value Unit V
MARKING DIAGRAM
MAC18xG AYWW
I2t PGM PG(AV) TJ Tstg
26 16 0.35 −40 to +125 −40 to +150
A2s W W °C °C
x A Y WW G
= D, M, or N = Assembly Location = Year = Work Week = Pb−Free Package
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