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MAC4DSM

ON Semiconductor

Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com MAC4DSM, MAC4DSN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume...


ON Semiconductor

MAC4DSM

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www.DataSheet4U.com MAC4DSM, MAC4DSN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On−State Current Rating of 4.0 Amperes RMS at 108°C Low IGT − 10 mA Maximum in 3 Quadrants High Immunity to dv/dt − 50 V/ms at 125°C Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available TRIACS 4.0 AMPERES RMS 600 − 800 VOLTS MT2 G MT1 MARKING DIAGRAMS 4 Unit V 1 2 3 DPAK CASE 369C STYLE 6 YWW AC 4DSxG MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DSM MAC4DSN On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 108°C) Average Gate Power (t = 8.3 msec, TC = 108°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 108°C) Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 108°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 4.0 A 1 ITSM 40 A 2 3 Value 4 DPAK−3 CASE 369...




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