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MAC210A8 Dataheets PDF



Part Number MAC210A8
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (MAC210A8 / MAC210A10) Triacs Silicon Bidirectional Thyristors
Datasheet MAC210A8 DatasheetMAC210A8 Datasheet (PDF)

www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features http://onsemi.com • Blocking Volt.

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www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features http://onsemi.com • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter • Small, Rugged, Thermowatt Construction for Low Thermal • • Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes (Quadrants) Pb−Free Packages are Available* Uniformity and Stability TRIACS 10 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC210A8 MAC210A10 On−State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations, (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 ms) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 10 100 A 1 A 2 3 x A Y WW G TO−220AB CASE 221A−07 STYLE 4 = 8 or 10 = Assembly Location = Year = Work Week = Pb−Free Package Value Unit V MAC210AxG AYWW I2t PGM PG(AV) IGM TJ Tstg 40 20 0.35 2.0 −40 to +125 −40 to +150 A2s W W A 1 °C °C 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC210A8 MAC210A8G MAC210A10 Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 MAC210A10G 1 December, 2005 − Rev. 2 Publication Order Number: MAC210A8/D MAC210A8, MAC210A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient Symbol RqJC RqJA TL Value 2.0 62.5 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA, TC = +25°C) Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) dv/dt(c) − 5.0 − V/ms VTM IGT − − − − VGT − − − − VGD IH 0.2 − 0.9 0.9 1.1 1.4 − 6.0 2.0 2.0 2.0 2.5 − 50 V mA 12 12 20 35 50 50 50 75 V − 1.2 1.65 V mA TJ = 25°C TJ = +125°C IDRM, IRRM − − − − 10 2.0 mA mA Symbol Min Typ Max Unit tgt − 1.5 − ms dv/dt − 100 − V/ms http://onsemi.com 2 MAC210A8, MAC210A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state.


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