FDP8860

www.DataSheet4U.com FDP8860 N-Channel PowerTrench® MOSFET September 2006 FDP8860 N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ Features General Description „ Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A „ Max rDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A „ Low Miller Charge „ Low Qrr Body Diode „ UIL Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ DC - DC Conversion „ Start / Alternator Sytems D G G D TO-220 S FDP Series S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature TC = 25°C TC = 25°C (Note 1) (Note 2) Ratings 30 ±20 80 219 556 673 254 -55 to +175 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case TO220 Thermal Resistance, Junction to Ambient TO220 0.59 62 °C/W Package Marking and Ordering Information Device Marking FDP8860 Device FDP8860 Package TO220AB Reel Size Tube Tape Width N/A Quantity 50 units ©2006 Fairchild Semiconductor Corporation FDP8860 Rev.B 1 www.fairchildsemi.com ...