BF245A

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Channel Temperature Range 3 DRAIN Symbol VDS VDG VGS ID IG(f) PD Tstg Value ±30 30 30 100 10 350 2.8 –65 to +150 3 DRAIN Unit Vdc Vdc Vdc mAdc mAdc mW mW/°C °C 2 GATE STYLE 22 1 SOURCE 1 GATE STYLE 23 2 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate–Source (VDS = 15 Vdc, ID = 200 µAdc) V(BR)GSS 30 BF245(1) VGS 0.4 BF245A, BF244A(2) 0.4 BF245B, BF244B 1.6 BF245C 3.2 Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) –ā0.5 Gate Reverse Current (VGS = 20 Vdc, VDS = 0) IGSS — ON CHARACTERISTICS Zero–Gate–Voltage Drain Current IDSS (VDS = 15 Vdc, VGS = 0) BF245(1) 2.0 BF245A, BF244A(2) 2.0 BF245B, BF244B 6.0 BF245C 12 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. 1 23 BF244A, BF244B CASE 29–11, STYLE 22 TO–92 (TO–226AA) 1 23 BF245, BF245A, BF245B, BF245C CASE 29–11, STYLE 23 TO–92 (TO–226AA) Typ Max Unit — — Vdc Vdc — 7.5 — 2.2 — 3.8 — 7.5 — –ā8.0 Vdc — 5.0 nAdc mAdc — 25 — 6.5 — 15 — 25 © Semiconductor Components Indus...