STSJ2NM60

www.DataSheet4U.com N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ2NM60 s s s s STSJ2NM60 VDSS 600 V RDS(on) < 3.2 Ω ID 2A s s TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS PowerSO-8 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TA = 25°C (1) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Total Dissipation at TA = 25°C (1) Derating Factor (1) dv/dt (3) Tstg Tj August 2002 Peak Diode Recovery voltage slope Storage Temperature Max. Operat...