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2N6395 Dataheets PDF



Part Number 2N6395
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Controlled Rectifiers
Datasheet 2N6395 Datasheet2N6395 Datasheet (PDF)

www.DataSheet4U.com 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features • Glass Passivated Junctions with Center Gate Geometry for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb−Free Packages are A.

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www.DataSheet4U.com 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features • Glass Passivated Junctions with Center Gate Geometry for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb−Free Packages are Available* http://onsemi.com SCRs 12 AMPERES RMS 50 thru 800 VOLTS G A Unit V K MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 90°C) Forward Average Gate Power (t = 8.3 ms, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2.0 −40 to +125 −40 to +150 A A A2s W W A °C °C 1 2 3 Value MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 2N639xG AYWW 2N639x = Device Code x = 4, 5, 7, or 9 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted) Rating Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RqJC TL Max 2.0 260 Unit °C/W °C 1 2 3 4 PIN ASSIGNMENT Cathode Anode Gate Anode †Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 August, 2006 − Rev. 6 Publication Order Number: 2N6394/D 2N6394 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS †Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) ON CHARACTERISTICS †Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak) †Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) † Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C) † Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) Turn-Off Time (VD = Rated VDRM) DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off-State Voltage Exponential (VD = Rated VDRM, TJ = 125°C) †Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. dv/dt − 50 − V/ms (ITM = 12 A, IR = 12 A) (ITM = 12 A, IR = 12 A, TJ = 125°C) VTM IGT VGT VGD IH tgt tq − − − 0.2 − − − − 1.7 5.0 0.7 − 6.0 1.0 15 35 2.2 30 1.5 − 50 2.0 − − V mA V V mA ms ms TJ = 25°C TJ = 125°C IDRM, IRRM − − − − 10 2.0 mA mA Symbol Min Typ Max Unit Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode − + Voltage IDRM at VDRM Forward Blocking Region (off state) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) 130 125 120 115 110 105 100 95 90 0 α = 30° 60° 90° 180° 8.0 dc α α = CONDUCTION ANGLE P(AV) , AVERAGE POWER (WATTS) 20 18 16 α 14 α = CONDUCTION ANGLE 12 10 α = 30° 60° 180° 90° dc 8.0 6.0 4.0 2.0 0 TJ ≈ 125°C 7.0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 8.0 Figure 1. Current Derating Figure 2. Maximum On−State Power Dissipation http://onsemi.com 2 2N6394 Series 100 70 50 30 i.


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