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2N6388

Part Number	2N6388
Manufacturer	Motorola
Description	NPN SILICON POWER TRANSISTORS
Published	Apr 6, 2007
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D Plastic Medium-Power Silico...
Datasheet	2N6388 PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D Plastic Medium-Power Silicon Transistors .
.
.
designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.
0 Adc • Collector–Emitter Sustaining Voltage – @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6387 VCEO(sus) = 80 Vdc (Min) — 2N6388 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.
0 Vdc (Max) @ IC = 5.
0 Adc — 2N6387, 2N6388 • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating 2N6387 2N6388 * *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...

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