M58LR128HT

www.DataSheet4U.com M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz – Asynchronous Page Read mode – Random access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8 Mbit banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS Security – 64 bit unique device number – 2112 bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block ■ ■ FBGA ■ VFBGA56 (ZB) 7.7 × 9 mm ■ ■ ■ Electronic signature – Manufacturer code: 20h – Top device codes: M58LR128HT: 88C4h – Bottom device codes M58LR128HB: 88C5h VFBGA56 package – ECOPACK® compliant ■ ■ ■ ■ ■ February 2007 Rev 1 1/112 www.st.com 1 Contents M58LR128HT, M58LR128HB Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signa...