KM44C16100B

www.DataSheet4U.com KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - KM44C16000B(5.0V, 8K Ref.) - KM44C16100B(5.0V, 4K Ref.) Active Power Dissipation Unit : mW Speed -45 -5 -6 Refresh Cycles Part NO. KM44C16000B* KM44C16100B Refresh cycle 8K 4K Refresh time Normal 64ms RAS CAS W Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages +5.0V±10% power supply 4K 715 660 605 8K 550 495 440 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Refresh Control Refresh Counter Memory Array 16,777,216 x 4 Cells Sense Amps & I/O * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refr...