DatasheetsPDF.com

KM44C16000B Dataheets PDF



Part Number KM44C16000B
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description (KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM
Datasheet KM44C16000B DatasheetKM44C16000B Datasheet (PDF)

www.DataSheet4U.com KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This.

  KM44C16000B   KM44C16000B


Document
www.DataSheet4U.com KM44C16000B, KM44C16100B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - KM44C16000B(5.0V, 8K Ref.) - KM44C16100B(5.0V, 4K Ref.) • Active Power Dissipation Unit : mW Speed -45 -5 -6 • Refresh Cycles Part NO. KM44C16000B* KM44C16100B Refresh cycle 8K 4K Refresh time Normal 64ms RAS CAS W • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode capability • TTL(5.0V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • +5.0V±10% power supply 4K 715 660 605 8K 550 495 440 FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss VBB Generator Refresh Control Refresh Counter Memory Array 16,777,216 x 4 Cells Sense Amps & I/O * Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms • Performance Range Speed -45 -5 -6 Refresh Timer Row Decoder Data in Buffer DQ0 to DQ3 Data out Buffer OE tRAC 45ns 50ns 60ns tCAC 12ns 13ns 15ns tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)*1 A0~A10 (A0~A11)*1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. KM44C16000B, KM44C16100B CMOS DRAM PIN CONFIGURATION (Top Views) • KM44C160(1)00BK • KM44C160(1)00BS VCC DQ0 DQ1 N.C N.C N.C N.C W RAS A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS DQ3 DQ2 N.C N.C N.C CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS VCC DQ0 DQ1 N.C N.C N.C N.C W RAS A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS DQ3 DQ2 N.C N.C N.C CAS OE A12(N.C)* A11 A10 A9 A8 A7 A6 VSS (K : 400mil SOJ) (S : 400mil TSOP(II)) * (N.C) : N.C for 4K Refresh product Pin Name A0 - A12 A0 - A11 DQ0 - 3 VSS RAS CAS W OE VCC N.C Pin Function Address Inputs(8K Product) Address Inputs(4K Product) Data In/Out Ground Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5.0V) No Connection KM44C16000B, KM44C16100B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN,VOUT VCC Tstg PD IOS Rating -1.0 to +7.0 -1.0 to +7.0 -55 to +150 1 50 CMOS DRAM Units V V °C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0*2 Typ 5.0 0 Max 5.5 0 VCC+1.0*1 0.8 Units V V V V *1 : VCC+2.0V at pulse width≤20ns which is measured at VCC *2 : -2.0 at pulse width≤20ns which is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Input Leakage Current (Any input 0≤VIN≤VCC+0.5V, all other pins not under test=0 Volt) Output Leakage Current (Data out is disabled, 0V≤VOUT ≤VCC) Output High Voltage Level(IOH=-5mA) Output Low Voltage Level(IOL=4.2mA) Symbol II(L) IO(L) VOH VOL Min -5 -5 2.4 Max 5 5 0.4 Units uA uA V V KM44C16000B, KM44C16100B DC AND OPERATING CHARACTERISTICS (Continued) Symbol Power Speed KM44C16000B ICC1 Don′t care -45 -5 -6 Don′t Care -45 -5 -6 -45 -5 -6 Don′t Care -45 -5 -6 100 90 80 2 100 90 80 70 60 50 1 100 90 80 Max CMOS DRAM Units KM44C16100B 130 120 110 2 130 120 110 80 70 60 1 130 120 110 mA mA mA mA mA mA mA mA mA mA mA mA mA mA ICC2 Normal Don′t care ICC3 ICC4 Don′t care ICC5 Normal Don′t care ICC6 ICC1 * : Operating Current (RAS and CAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 * : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4 * : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6 * : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min) *Note : ICC1 , ICC3 , ICC4 and ICC6 are depen.


K4M51323PC KM44C16000B KM44C16100B


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)