DatasheetsPDF.com

STS8NFS30L Dataheets PDF



Part Number STS8NFS30L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STS8NFS30L DatasheetSTS8NFS30L Datasheet (PDF)

www.DataSheet4U.com ® STS8NFS30L ™ STripFET N - CHANNEL 30V - 0.018Ω - 8A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30 V SCHOTTKY IF (A V) 3 A R DS(on ) <0.022 Ω V RRM 30 V ID 8 A V F(M AX) 0.51 V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cel.

  STS8NFS30L   STS8NFS30L



Document
www.DataSheet4U.com ® STS8NFS30L ™ STripFET N - CHANNEL 30V - 0.018Ω - 8A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30 V SCHOTTKY IF (A V) 3 A R DS(on ) <0.022 Ω V RRM 30 V ID 8 A V F(M AX) 0.51 V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM( • ) P t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C o o Valu e 30 30 ± 20 8 5 32 2.5 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symb ol V RRM I F(RMS) I F (AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L=125 o C δ =0.5 tp= 10 ms Sinusoidal tp=100 µs Valu e 30 20 3 75 1 10000 Un it V A A A A V/ µ s (•) Pulse width limited by safe operating area December 1999 1/8 STS8NFS30L THERMAL DATA R thj -amb R thj -amb T s tg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambientSCHOT TKY Storage T emperature Range Maximum Junction Temperature (*) mounte d on FR-4 board (ste ady stat e) 50 100 -65 to 150 150 o o C/W C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 C o ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 4.5V Test Con ditions ID = 250 µ A ID = 4 A ID = 4 A 8 Min. 1 Typ. 1.6 0.018 0.021 Max. 2.5 0.022 0.026 Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =4 A V GS = 0 Min. Typ. 10 1050 250 85 Max. Unit S pF pF pF 2/8 STS8NFS30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V ID = 4 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A V GS = 4.5 V Min. Typ. 22 60 17.5 4 7 23 Max. .


STS8NF30L STS8NFS30L STTH802


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)