STS8C5H30L

www.DataSheet4U.com STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET™ III MOSFET Table 1: General Features TYPE STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) s s s s s s Figure 1: Package RDS(on) < 0.022 Ω < 0.055 Ω ID 8A 5A VDSS 30 V 30 V TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.045 Ω CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DRIVE STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 2: Internal Schematic Diagram APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES s DC MOTOR DRIVE Table 2: Order Codes PART NUMBER STS8C5H30L MARKING S8C5H30L PACKAGE SO-8 PACKAGING TAPE & REEL Rev. 2 September 2004 1/11 STS8C5H30L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operating Drain Current (continuous) at TC = 100°C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operati...