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STGF19NC60HD Dataheets PDF



Part Number STGF19NC60HD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description very fast IGBT
Datasheet STGF19NC60HD DatasheetSTGF19NC60HD Datasheet (PDF)

www.DataSheet4U.com STGF19NC60HD N-channel 600V - 9A - TO-220FP Very fast PowerMESH™ IGBT General features Type STGF19NC60HD ■ ■ ■ VCES 600V IC @100°C (max)@25°C < 2.5V 9A 3 VCE(sat) Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode 1 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH.

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www.DataSheet4U.com STGF19NC60HD N-channel 600V - 9A - TO-220FP Very fast PowerMESH™ IGBT General features Type STGF19NC60HD ■ ■ ■ VCES 600V IC @100°C (max)@25°C < 2.5V 9A 3 VCE(sat) Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode 1 2 TO-220FP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Internal schematic diagram Applications ■ ■ ■ High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drivers Order codes Part number STGF19NC60HD Marking GF19NC60HD Package TO-220FP Packaging Tube January 2007 Rev 3 1/14 www.st.com Contents STGF19NC60HD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGF19NC60HD Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) ICL (2) IF VGE PTOT Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Turn-off minimum current Diode RMS forward current at TC = 25°C Gate-emitter voltage Total dissipation at TC = 25°C Operating junction temperature Value 600 16 9 40 20 ±20 35 – 55 to 150 Unit V A A A A V W °C 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V Table 2. Symbol Rthj-case Thermal resistance Parameter Thermal resistance junction-case max IGBT Thermal resistance junction-case max DIODE Value 3.9 5.5 62.5 Unit °C/W °C/W °C/W Rthj-amb Thermal resistance junction-ambient max 3/14 Electrical characteristics STGF19NC60HD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.8 1.6 3.75 2.5 Typ. Max. Unit V V V V µA mA nA S Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=125°C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 µA VCE= Max rating,TC= 25°C VCE= Max rating,TC= 125°C VGE= ±20V , VCE= 0 VCE = 15V, IC= 12A 5.75 150 1 ±100 5 Table 4. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 5A, VGE = 15V, Figure 17 Min. Typ. 1180 130 36 53 10 23 Max. Unit pF pF pF nC nC nC 4/14 STGF19NC60HD Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 12A , VGE= 15V, RG= 10Ω Figure 18 VCC = 390V, IC = 12A , VGE= 15V, RG= 10Ω Tj = 125°C Figure 18 VCC = 390V, IC = 12A RG= 10Ω , VGE= 15V, Figure 18 VCC = 390V, IC = 12A , VGE= 15V, RG= 10Ω Tj = 125°C Figure 18 Min. Typ. 25 7 1600 24 8 1400 27 97 73 58 144 128 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 12A , VGE= 15V, RG= 10Ω Figure 16 VCC = 390V, IC = 12A RG= 10Ω , VGE= 15V, Tj = 125°C Figure 16 Min. Typ. 85 189 274 187 407 594 Max. Unit µJ µJ µJ µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as e.


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