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STGP10NC60HD Dataheets PDF



Part Number STGP10NC60HD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet STGP10NC60HD DatasheetSTGP10NC60HD Datasheet (PDF)

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on.

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STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 3 1 D²PAK 2 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NC60HDT4 GB10NC60HD STGD10NC60HDT4 GD10NC60HD STGF10NC60HD GF10NC60HD STGP10NC60HD GP10NC60HD Package D²PAK DPAK TO-220FP TO-220 Packaging Tape and reel Tube December 2008 Rev 5 1/19 www.st.com 19 Contents Contents STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter TO-220 / D²PAK Value DPAK Unit TO-220FP VCES Collector-emitter voltage (VGE = 0) 600 IC(1) Collector current (continuous) at TC = 25 °C 20 IC(1) Collector current (continuous) at TC = 100 °C 10 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter voltage ±20 IF Diode RMS forward current at TC = 25 °C 10 IFSM Surge not repetitive forward current tp = 10 ms sinusoidal 20 PTOT Total dissipation at TC = 25 °C 65 62 VISO TJ Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Operating junction temperature – 55 to 150 1. Calculated according to the iterative formula: IC(TC) = ------------------------------------T----j--(--m----a---x---)---–----T----C-------------------------------------Rthj – c × VCE(sat)(max)(Tj(max), IC(TC)) 2. Vclamp = 80 % (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C 3. Pulse width limited by max junction temperature allowed 9 6 24 2500 V A A A A V A A W V °C Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case IGBT max. Rthj-case Thermal resistance junction-case diode max. Rthj-amb Thermal resistance junction-ambient max. D²PAK TO-220 1.9 4 62.5 Value DPAK TO-220FP 2.0 5.1 4.5 7 100 62.5 Unit °C/W °C/W °C/W 3/19 Electrical characteristics STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE= 0) IC= 1 mA VCE(sat) Collector-emitter saturation VGE = 15 V, IC = 5 A voltage VGE = 15 V, IC = 5 A, TC = 125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES IGES gfs (1) Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C VGE = ± 20 V Forward transconductance VCE = 15 V, IC= 5 A 1. Pulse duration = 300 μs, duty cycle 1.5 % Table 5. Symbol Dynamic Parameter Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 390 V, IC = 5 A, VGE = 15 V (see Figure 19) Min. Typ. Max. Unit 600 V 1.9 2.5 V 1.7 V 3.75 5.75 V 150 µA 1 mA ±100 nA 3.5 S Min. Typ. Max. Unit 365 pF 43 pF 8.3 pF 19.2 nC 4.5 nC 7 nC 4/19 STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 5 A RG= 10 Ω, VGE= 15 V, (see Figure 18) (see Figure 20) VCC = 390 V, IC = 5 A RG= 10 Ω, VGE= 15 V, TC = 125 °C (see Figure 18) (see Figure 20) Vcc = 390 V, IC = 5 A, RGE = 10 Ω, VGE = 15 V (see Figure 18) (see Figure 20) Vcc = 390 V, IC.


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