www.DataSheet4U.com
S T U/D3525NLS
S amHop Microelectronics C orp.
Aug 06 , 2005
N-C hannel Logic Level E nhancement ...
www.DataSheet4U.com
S T U/D3525NLS
S amHop Microelectronics C orp.
Aug 06 , 2005
N-C hannel Logic Level E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
(mW)
ID
35A
R DS (ON)
Max
S uper high dense cell design for low R DS (ON ).
16 @ V G S = 10V 25 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a -P ulsed @ T C =25 C S ymbol Vspike C V DS V GS ID IDM IS PD T J , T S TG Limit 30 25 20 35 75 20 50 -55 to 175 Unit V V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
3 50
C /W C /W
S T U/D3525NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S
a
Condition
V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A
Min Typ C Max Unit
25 1 V uA 100 nA 1 1.7 12 18 30 17 800 210 120 3 11 18 27 10 15.5 8.2 2.2 4.3 3 16 V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltag...