Document
www.DataSheet4U.com
S T U/D302S
S amHop Microelectronics C orp.
Apr 03 , 2006
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( mΩ)
ID
50 A
R DS (ON)
9 12
Max
S uper high dense cell design for low R DS (ON ).
@ V G S = 10V @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ T C =25 C ID IDM IS PD T J , T S TG
Limit 30 20 50 180 20 50 -55 to 175
Unit V V A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
S T U/D302S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
5
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 7 10 50 22 1020 325 225 0.25 18 33 37 28 3 9 12 V
m ohm m ohm
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20A V GS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
26 13 2.3 8.2
S T U/D302S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is = 10A
Min Typ Max Unit
0.83 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
80
V G S =4.5V
20
64
ID , Drain C urrent(A)
I D , Drain C urrent (A)
V G S =8V V G S =10V
V G S =4V
15 -55 C 10 T j=125 C 5 25 C
48
32
V G S =3.5V
16
V G S =3V
0 0 0.5 1 1.5 2 2.5 3
0
0
0.6
1.2
1.8
2.4
3.0
3.6
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
18 1.5
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is .