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STU302S Dataheets PDF



Part Number STU302S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor
Datasheet STU302S DatasheetSTU302S Datasheet (PDF)

www.DataSheet4U.com S T U/D302S S amHop Microelectronics C orp. Apr 03 , 2006 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( mΩ) ID 50 A R DS (ON) 9 12 Max S uper high dense cell design for low R DS (ON ). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwi.

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www.DataSheet4U.com S T U/D302S S amHop Microelectronics C orp. Apr 03 , 2006 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( mΩ) ID 50 A R DS (ON) 9 12 Max S uper high dense cell design for low R DS (ON ). @ V G S = 10V @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ T C =25 C ID IDM IS PD T J , T S TG Limit 30 20 50 180 20 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W 1 S T U/D302S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS 5 Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 20A V GS =4.5V, ID= 10A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 7 10 50 22 1020 325 225 0.25 18 33 37 28 3 9 12 V m ohm m ohm ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20A V GS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC 26 13 2.3 8.2 S T U/D302S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is = 10A Min Typ Max Unit 0.83 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 80 V G S =4.5V 20 64 ID , Drain C urrent(A) I D , Drain C urrent (A) V G S =8V V G S =10V V G S =4V 15 -55 C 10 T j=125 C 5 25 C 48 32 V G S =3.5V 16 V G S =3V 0 0 0.5 1 1.5 2 2.5 3 0 0 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 18 1.5 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is .


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