STC08IE150HV

www.DataSheet4U.com STC08IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 8 A - 0.10 Ω Features VCS(ON) 0.8 V ■ PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive ■ ■ ■ ■ ■ ■ 1 23 4 TO247-4LHV Applications ■ ■ Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram Description The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies. Order Codes Part Number STC08IE150HV Marking C08IE150HV Package TO247-4LHV Packaging TUBE December 2006 Rev 2 1/7 www.st.com 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1 Absolute Maximum Ratings STC08IE150HV 1 Table 1. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Absolute Maximum Ratings Absolute Maximum Ratingsn Parameter Collector-source voltage (VBS = VGS = 0 V) Base-source voltage (IC = 0, VGS = 0 V) source-base voltage (ic = 0, vgs = 0 v) Gate-source Voltage Collector Current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at Tc = 25°C Storage temperature ...