® ST13007D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER...
® ST13007D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE
s HIGH VOLTAGE CAPABILITY s INTEGRATED FREE-WHEELING DIODE s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC s LARGE RBSOA
APPLICATIONS s UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature
April 2003
Value 700 400 9 8 16 4 8 80
-65 to 150 150
Unit V V V A A A A W oC oC
1/7
ST13007D
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
1.56 62.5
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off Current (VBE = 0)
VCE =...