SI9410DY

www.DataSheet4U.com Si9410DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V 30 0.040 @ VGS = 5 V 0.050 @ VGS = 4.5 V ID (A) 7.0 6.0 5.4 D D D D SO-8 N/C S S G 1 2 3 4 Top View S Ordering Information: Si9410DY Si9410DY-T1 (with Tape and Reel) S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 30 "20 7.0 5.8 30 2.8 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70122 S-31060—Rev. M, 26-May-03 www.vishay.com Symbol RthJA Limit 50 Unit _C/W 1 Si9410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =7.0 A Drain-Source On-State Resistanceb rDS(on) VGS =...