MW6IC2240NBR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band (2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 28 dB Power Added Efficiency — 15% IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth Driver Application Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 29 dB IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW Pout. Characterized with Series Equivalent Large -Signal Impedance Parameters and Common Source Scattering Parameters On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) Integrated Quiescent C...