MW6IC2015NBR1

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 26 dB Power Added Efficiency — 28% IMD — - 30 dBc Driver Application Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 130 mA, IDQ2 = 170 mA, Pout = 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 27 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = - 69 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 0.8% rms Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW Output Power Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. Features Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Quiescent Cu...