RF LDMOS Wideband 2-Stage Power Amplifiers
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Freescale Semiconductor Technical Data
Document Number: MW5IC970NBR1 Rev. 0, 4/2006
RF LDMOS Wide...
Description
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MW5IC970NBR1 Rev. 0, 4/2006
RF LDMOS Wideband 2 - Stage Power Amplifiers
Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. The device has a 2 - stage design with off - chip matching for the input, interstage and output networks to cover the desired frequency band. Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 Watts PEP Power Gain — 30 dB Drain Efficiency — 48% Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 70 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Integrated Quiescent Current Temperature Compensation with Enable/Disable Function On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) Integrated ESD Protection 200°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW5IC970NBR1
800 - 900 MHz, 70 W, 28 V RF LDMOS WIDEBAND 2 - STAGE POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC
VRD2 VRG2/VGS2 Quiescent Current Temperature Compensation
VRG1/VGS1
GND VRD2 VRG2/VGS2 VRG1/VGS1 RFin1 GND VD2/RFout2 VRD1 VD1/RFout1 VD1/RFout1 RFin2 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
VD2/ RFou...
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