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MD2009DFX
High voltage NPN Power transistor for standard definition CRT display
General features
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www.DataSheet4U.com
MD2009DFX
High voltage
NPN Power
transistor for standard definition CRT display
General features
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State-of-the-art technology: – diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power package U.L. compliant Integrated free wheeling diode In compliance with the 2002/93/EC European directive
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ISOWATT218FX
Applications
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Internal schematic diagram
Horizontal deflection output for TV
Description
The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. RBE=60Ω typ.
Order codes
Part number MD2009DFX Marking MD2009DFX Package ISOWATT218FX Packaging Tube
October 2006
Rev 4
1/10
www.st.com 10
Electrical ratings
MD2009DFX
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB PTOT Visol Tstg TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Base-emitter voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc = 25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max. operating junction temperature Value 1500 700 7 10 16 6 58 2500 -65 to...