BUX98APW

www.DataSheet4U.com ® BUX98APW HIGH VOLTAGE NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 3 2 1 TO-247 DESCRIPTION The BUX98APW is a silicon Multiepitaxial Mesa NPN transistor in TO-247 plastic package. It is intended for use in industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (R BE = ≤ 10 Ω ) Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 1000 1000 450 7 24 36 5 8 200 -65 to 150 150 Unit V V V V A A A A W o o C C February 2002 1/4 BUX98APW THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CES I CEO IEBO V(BR)EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Test Conditions V CE = 1000 ...