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FDU8586 Dataheets PDF



Part Number FDU8586
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDU8586 DatasheetFDU8586 Datasheet (PDF)

www.DataSheet4U.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description „ Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been.

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www.DataSheet4U.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description „ Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application D G G D S I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 20 ±20 35 93 354 144 77 -55 to 175 mJ W °C A Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 1.94 100 52 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD8586 FDU8586 Device FDD8586 FDU8586 Package TO-252AA TO-251AA Reel Size 13’’ N/A(Tube) Tape Width 12mm N/A Quantity 2500 units 75 units ©2007 Fairchild Semiconductor Corporation FDD8586/FDU8586 Rev. B 1 www.fairchildsemi.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 16V, VGS = 0V VGS = ±20V TJ = 150°C 20 14.6 1 250 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 35A Drain to Source On Resistance VGS = 4.5V, ID = 33A VGS = 10V, ID = 35A TJ = 175°C VDS = 10V,ID = 35A 1.2 1.6 -6.7 4.0 5.7 6.5 175 5.5 8.5 8.9 S mΩ 2.5 V mV/°C Forward Transcondductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 1865 550 335 1.2 2480 730 445 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain “Miller”Charge.


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