FDD8586

www.DataSheet4U.com FDD8586/FDU8586 N-Channel PowerTrench® MOSFET January 2007 FDD8586/FDU8586 N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description „ Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 34nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application D G G D S I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 20 ±20 35 93 354 144 77 -55 to 175 mJ W °C A Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 1.94 100 52 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD8586 FDU8586 Device FDD8586 FDU8586 Packa...