STC05IE150HP
Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω
Features
VCS(ON) 0.6 V
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PRELIMINARY DATA
...
STC05IE150HP
Emitter Switched Bipolar
Transistor ESBT® 1500 V - 5 A - 0.12 Ω
Features
VCS(ON) 0.6 V
■
PRELIMINARY DATA
IC 5A
RCS(ON) 0.12 W
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive TO247-4LHP
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Applications
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Aux SMPS for three phase mains Sepic PFC
Internal Schematic Diagram
Description
The STC05IE150HP is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.
Order Codes
Part Number STC05IE150HP Marking C05IE150HP Package TO247-4LHP Packaging TUBE
November 2006
Rev 2
1/7
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1 Absolute Maximum Ratings
STC05IE150HP
1
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Ratingsn
Parameter Collector-source voltage (VBS = VGS = 0 V) Base-source voltage (IC = 0, VGS = 0 V) source-base voltage (ic = 0, vgs = 0 v) Gate-source Voltage Collector Current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperat...
