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BUL805

ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features ■ ■ ■ ■ ■ ■ NPN Transistor H...


ST Microelectronics

BUL805

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BUL805 High voltage fast-switching NPN Power Transistor Preliminary Data General features ■ ■ ■ ■ ■ ■ NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive TO-220 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology. Internal schematic diagram Applications ■ ■ Electronic ballast for fluorescent lighting Dedicated for PFC solution in half-bridge voltage fed topology. Order codes Part Number BUL805 Marking BUL805 Package TO-220 Packing Tube May 2006 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. BUL805 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...




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