BUL742A

® BUL742A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR: 120 V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. s SWITCH MODE POWER SUPPLIES s 3 1 2 TO-220 DESCRIPTION The BUL742A is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, I B ≤ 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction Temperature Value 950 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C 1/5 October 2003 BUL742A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/...