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BUL704 Dataheets PDF



Part Number BUL704
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description High voltage fast-switching NPN Power Transistor
Datasheet BUL704 DatasheetBUL704 Datasheet (PDF)

BUL704 High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ ■ NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive TO-220 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar ed.

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BUL704 High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ ■ NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive TO-220 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Internal schematic diagram Applications ■ ■ Electronic ballast for fluorescent lighting Dedicated for PFC solution in HF ballast halfbridge voltage fed Order codes Part Number BUL704 Marking BUL704 Package TO-220 Packing Tube May 2006 Rev 1 1/11 www.st.com 11 BUL704 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 BUL704 Electrical ratings 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 700 400 10 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max Value 1.78 62.5 Unit °C/W °C/W 3/11 Electrical characteristics BUL704 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICES ICEO VEBO Electrical characteristics Parameter Collector cut-off current (VBE =-1.5V) Collector cut-off current (IB =0) Emitter-base voltage (IC = 0) Test Conditions VCE =700V VCE =700V VCE =400V IE =10mA IC =100mA L =25mH 400 IC =1A IC =2.5A IC =1A IC =2.5A IC =10mA IC =2A VCC =125V IB1 = -IB2 =0.4A tp = 30µs IC =2A VBE(off) =-5V (see fig.12 ) IB1 =0.4A R BB =0Ω 0.6 0.1 1 0.2 µs µs IB =0.2A IB =0.5A IB =0.2A IB =0.5A V CE =5V V CE =5V IC =2A 1.5 0.2 3 0.4 µs µs 10 14 28 0.5 0.8 1.1 1.2 V V V V V 10 Min. Typ. Max. 100 500 250 Unit µA µA µA V Tj =125°C Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load Storage time Fall time Inductive load Storage time Fall time VBE(sat) (1) hFE ts tf ts tf Vclamp=200V (see fig.13) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 4/11 BUL704 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Derating Curve Figure 3. DC current gain Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage 5/11 Electrical characteristics Figure 7. Inductive load fall time Figure 8. BUL704 Inductive load storage time Figure 9. Resistive load fall time Figure 10. Resistive load storage time Figure 11. Reverse biased safe operating area 6/11 BUL704 Electrical characteristics 2.2 Test circuits Figure 12. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Figure 13. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 7/11 Package mechanical data BUL704 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 BUL704 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034.


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