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1SMB85AT3 Dataheets PDF



Part Number 1SMB85AT3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (1SMBxxxAT3) 600 Watt Peak Power Zener Transient Voltage Suppressors
Datasheet 1SMB85AT3 Datasheet1SMB85AT3 Datasheet (PDF)

1SMB5.0AT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automot.

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1SMB5.0AT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Features PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.0 V − 170 V, 600 W PEAK POWER Cathode Anode • • • • • • • • • Working Peak Reverse Voltage Range − 5.0 V to 170 V Standard Zener Breakdown Voltage Range − 6.7 V to 199 V Peak Power − 600 W @ 1.0 ms ESD Rating of Class 3 (>16 kV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < 1.0 ns Pb−Free Packages are Available A Y WW xx G SMB CASE 403A PLASTIC MARKING DIAGRAM AYWW xx G G = Assembly Location = Year = Work Week = Device Code (Refer to page 3) = Pb−Free Package Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any (Note: Microdot may be in either location) ORDERING INFORMATION Device 1SMBxxxAT3 1SMBxxxAT3G Package SMB SMB (Pb−Free) Shipping † 2500/Tape & Reel 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 February, 2007 − Rev. 10 Publication Order Number: 1SMB5.0AT3/D 1SMB5.0AT3 Series MAXIMUM RATINGS Rating Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient Forward Surge Current (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PPK PD Value 600 3.0 40 25 0.55 4.4 226 100 −65 to +150 Unit W W mW/°C °C/W W mW/°C °C/W A °C RqJL PD RqJA IFSM TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1 in square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF VC VBR VRWM I IF IR VF IT V IPP 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. Uni−Directional TVS http://onsemi.com 2 1SMB5.0AT3 Series ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VRWM (Note 6) V 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 85 90 100 110 120 130 150 160 170 Breakdown Voltage IR @ VRWM mA 800 800 500 500 100 50 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 55.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 VBR (Note 7) Volts Min 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 94.4 100 111 122 133 144 167 178 189 Nom 6.7 7.02 7.6 8.19 8.77 9.36 9.92 10.55 11.7 12.85 14 15.15 16.4 17.6 18.75 19.9 21.05 23.35 25.65 28.1 30.4 32.75 35.05 38.65 42.1 46.75 50.3 52.65 56.1 59.7 63.15 67.8 70.2 74.85 81.9 87.7 99.2 105.5 117 128.5 140 151.5 176 187.5 199 Max 7.0 7.37 7.98 8.6 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22..


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