DatasheetsPDF.com

STV300NH02L

ST Microelectronics

N-channel Power MOSFET

www.DataSheet4U.com STV300NH02L N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET™ Power MOSFET PRELIMINARY DATA Gene...


ST Microelectronics

STV300NH02L

File Download Download STV300NH02L Datasheet


Description
www.DataSheet4U.com STV300NH02L N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET™ Power MOSFET PRELIMINARY DATA General features Type STV300NH02L ■ ■ ■ ■ VDSS 24V RDS(on) 0.001Ω ID 280A 10 1 RDS(on)*Qg industry’s benchmark Conduction losses reduced Low profile, very low parasitic inductance Switching losses reduced PowerSO-10 Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for high current OR-ing application. Internal schematic diagram Applications ■ Switching application – OR-ing – Specially designed and optimized for high efficiency DC/DC converters. Connection diagram (top view) Order code Part number STV300NH02L Marking V300NH02L Package PowerSO-10 Packaging Tape & reel February 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STV300NH02L 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT (3) Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 24 ± 20 280 200 1120 300 2 2296 -55 to 175 Operating junction temperature Unit V V A A A W W/°C mJ °C EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature 1. This value is ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)