STRH40N25FSY3

STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET™ Power MOSFET PRELIMINARY DATA Features Type STRH40N25FSY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS 250V Low RDS(on) Fast switching Single event effect (SEE) hardened Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to improve immunity to space effect. It is therefore suitable as power switch in mainly high-efficiency DC-DC converters and Motor Control applications. It is also intended for any application with low gate charge drive requirements. Applications ■ ■ Satellite High reliability applications Order codes Part number STRH40N25FSY1 STRH40N25FSY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH40N25FSY1 RH40N25FSY3 Package TO-254AA TO-254AA Packaging Individual strip pack Individual strip pack March 2007 Rev 2 1/13 www.st.com 13 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STRH40N25FSY3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . ...